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| Price | Negotiable |
| MOQ | 5 pcs |
| Delivery Time | 1-4 weeks |
| Brand | BonTek |
| Place of Origin | China |
| Certification | ISO:9001, ISO:14001 |
| Model Number | Lithium Niobate (LiNbO3) |
| Packaging Details | Cassette/ Jar package, vaccum sealed |
| Payment Terms | T/T |
| Supply Ability | 10000 pcs/Month |
| Usage | Surface Acoustic Wave components | Place of Origin | China |
| Character | Pyroelectric Free | Resistivity | 0.9E+11 ~ 9.0E+11 (Standard Black); 1.0E+10 ~ 9.0E+10 (Super Black) |
| Packaging Details | Cassette/ Jar package, vaccum sealed | Roughness | RMS<0.5nm, RMS<1nm |
| Material | Black LiNbO3 Wafer | Model Number | Lithium Niobate (LiNbO3) |
| Supply Ability | 10000 pcs/Month | Certification | ISO:9001, ISO:14001 |
| Brand Name | BonTek | Payment Terms | T/T |
| Reduction | Reduced Lithium Niobate | Price | Negotiable |
| Delivery Time | 1-4 weeks | Minimum Order Quantity | 5 pcs |
| Surface Finish | DSP & SSP | Diameter | 10×10mm, 20×20mm, 50×50mm, 3'', 4'' |
Pyroelectric Free Black LiNbO3 Wafer 128Y-Cut SAW Grade
The reduction technique is used to produce black lithium niobate (LiNbO3). Black LiNbO3 wafer has a high ability to neutralize charges even if the electric potential occurs instantaneously. The pyroelectric effect of LN wafer is almost eliminated and the transmittance is significantly reduced. The piezoelectric properties of black lithium niobate wafers are no different from those of standard wafers. Therefore, black reduced lithium niobate wafers are widely used to produce higher frequency surface acoustic wave devices.
BonTek is proud to announce that we can offer 3 ", 4 ", and 6 "black LN wafers for all cutting angles.
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Material |
3" 4" 6" 8" LN wafer Saw/Optical grade |
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Orientation |
X/Z/Y41°/Y64°/Y128°/YZ/YX or Customized |
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Curie Temp |
1142°C±3°C |
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Reduction |
Standard Black - 0.9E+11 ~ 9.0E+11 Super Black - 1.0E+10 ~ 9.0E+10 |
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Surface finish |
single or double sides polish (DLP/SLP/ SSP/DSP all available) |
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Thickness |
0.18/0.25/0.35/0.50/1.00 + mm |
|
TTV |
< 1~5µm |
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BOW |
± (25µm ~40um ) |
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Warp |
<= 35µm |
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LTV (5mmx5mm) |
<1.5 um |
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PLTV(<0.5um) |
≥98% (5mm*5mm) with 2mm edge excluded |
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Edge |
Compl't with SEMI M1.2@with GC800# .regular at C typed |
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Orientation flats |
available, per request |
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Polished side Ra |
Roughness Ra<=5A |
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Back Side Criteria |
Roughness Ra:0.5-1.0µm GC#1000 |
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Edge Rounding |
Compliant with SEMI M1.2 Standard/refer to IEC62276 |
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Cracks, saw marks, stains |
None |
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Melting Point |
1253° C |
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Crystal System |
Trigonal |
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Point Group |
3m |
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Crystal Density |
4.647 x 10³ kg / m³ |
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Curie Temperature (Tc) |
1150°C |
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Heat Capacity (Cp) |
89 J / k.mol |
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Dielectric Constants |
T11=85.2 |
|
T33=28.7 |
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Elastic Constants |
CE11=2.03 x 1011 N / m2 |
|
CE12=0.573 |
|
|
CE13=0.752 |
|
|
CE14=0.085 |
|
|
CE33=2.424 |
|
|
CE44=0.595 |
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Piezoelectric Strain Constants |
e15=3.7 C / m2 |
|
e22=2.5 |
|
|
e31=0.23 |
|
|
e33=1.33 |
Acceptance Check
