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| Price | Negotiated |
| MOQ | 10pieces |
| Delivery Time | 2-15days |
| Brand | Infineon Technologies/International Rectifier IOR |
| Place of Origin | CHINA |
| Certification | ROHS |
| Model Number | IRF1404ZPBF |
| Packaging Details | Standard package |
| Payment Terms | T/T, Western Union |
| Supply Ability | 500000pcs |
| Place of Origin | CHINA | Category | Electronic Components-MOSFET (Metal Oxide) |
| Description | MOSFET N-CH 40V 180A TO220AB | Packaging Details | Standard package |
| Model Number | IRF1404ZPBF | Mounting Type | Through hole |
| Supply Ability | 500000pcs | Base part number | IRF1404 |
| Certification | ROHS | Brand Name | Infineon Technologies/International Rectifier IOR |
| Payment Terms | T/T, Western Union | Series | HEXFET MOSFET (Metal Oxide) |
| Type | Transistors - FETs, MOSFETs - Single | Details | N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB |
| Price | Negotiated | Delivery Time | 2-15days |
| Minimum Order Quantity | 10pieces | Family | Discrete Semiconductor Products |
| Package | TO220 | Stock | In Stock |
IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs
N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:
|
Category
|
Discrete
Semiconductor
Products
|
|
Transistors
-
FETs,
MOSFETs
-
Single
|
|
|
Mfr
|
Infineon
Technologies
|
|
Series
|
HEXFET®
|
|
Package
|
Tube
|
|
FET
Type
|
N-Channel
|
|
Technology
|
MOSFET
(Metal
Oxide)
|
|
Drain
to
Source
Voltage
(Vdss)
|
40
V
|
|
Current
-
Continuous
Drain
(Id)
@
25°C
|
180A
(Tc)
|
|
Drive
Voltage
(Max
Rds
On,
Min
Rds
On)
|
10V
|
|
Rds
On
(Max)
@
Id,
Vgs
|
3.7mOhm
@
75A,
10V
|
|
Vgs(th)
(Max)
@
Id
|
4V
@
250µA
|
|
Gate
Charge
(Qg)
(Max)
@
Vgs
|
150
nC
@
10
V
|
|
Vgs
(Max)
|
±20V
|
|
Input
Capacitance
(Ciss)
(Max)
@
Vds
|
4340
pF
@
25
V
|
|
FET
Feature
|
-
|
|
Power
Dissipation
(Max)
|
200W
(Tc)
|
|
Operating
Temperature
|
-55°C
~
175°C
(TJ)
|
|
Mounting
Type
|
Through
Hole
|
|
Supplier
Device
Package
|
TO-220AB
|
|
Package
/
Case
|
TO-220-3
|
|
Base
Product
Number
|
IRF1404
|
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
8541.29.0095 |
| Part number | IRF1404ZPBF |
| Base part number | IRF1404 |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
