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| Price | Negotiated |
| MOQ | 1000-2000 PCS |
| Delivery Time | 1 - 2 Weeks |
| Brand | OTOMO |
| Place of Origin | ShenZhen China |
| Certification | RoHS、SGS |
| Model Number | 8205A |
| Packaging Details | Boxed |
| Payment Terms | L/C T/T Western Union |
| Supply Ability | 18,000,000PCS / Per Day |
| Place of Origin | ShenZhen China | VDSS | 6.0 A |
| Packaging Details | Boxed | APPLICATION | Power Management |
| Power mosfet transistor | SOT-23-6L Plastic-Encapsulate | Model Number | 8205A |
| Supply Ability | 18,000,000PCS / Per Day | Certification | RoHS、SGS |
| Brand Name | OTOMO | Payment Terms | L/C T/T Western Union |
| Price | Negotiated | Delivery Time | 1 - 2 Weeks |
| Product name | Mosfet Power Transistor | Minimum Order Quantity | 1000-2000 PCS |
| FEATURE | Low Gate Charge |
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET
General Description
|
VDSS= V ID= 6.0 A z 20 |
G1 6 |
D1,D2 5 |
G2 4 |
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| z |
RDS(on) < Ω@V = 4.5V 25m GS |
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| z |
RDS(on) < Ω@V = 2.5V 32m GS |
1 2 3 S1 D1,D2 S2 |
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FEATURE
z TrenchFET Power MOSFET
z Excellent RDS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
APPLICATION
z Battery Protection
z Load Switch
z Power Management
| Parameter Symbol Test Condition Min Typ Max Unit |
| STATIC CHARACTERICTISCS |
| Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V |
| Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA |
| Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA |
| Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V |
| Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S |
| Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V |
| DYNAMIC CHARACTERICTISCS (note4) |
| Input Capacitance Ciss 800 pF |
| Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF |
| Reverse Transfer Capacitance Crss 125 pF |
| SWITCHING CHARACTERICTISCS (note 4) |
| Turn-on delay time td(on) 18 ns |
| Turn-on rise time tr VDD=10V,VGS=4V, 5 ns |
| Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns |
| Turn-off fall time tf 20 ns |
| Total Gate Charge Qg 11 nC |
| Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC |
| Gate-Drain Charge Qgd 2.5 nC |
Notes :
1. Repetitive rating:Pluse width limited by maximum junction temperature
2. Surface Mounted on FR4 board,t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
SOT-23-6L Package Outline Dimensions
