Silicon Carbide (SiC) Plate
Silicon carbide (SiC) shares many characteristics with diamond—it is one of the lightest, hardest, and strongest technical ceramic materials. It possesses excellent thermal conductivity, acid resistance, and low thermal expansion. Silicon carbide is an excellent material when physical wear is a significant consideration, due to its exceptional erosion and abrasion resistance.
- Pressureless Sintered Silicon Carbide Ceramics
- Exceptional erosion and abrasion resistance
- Suitable for nozzles, sandblasting nozzles, and cyclone separator components
Mechanical Properties
| Property |
Unit |
Silicon Carbide |
| Density |
g/cm³ |
3.15 |
| Vickers Hardness |
Hv0.5 |
2650 |
| Flexural Strength |
MPa |
450 |
| Compressive Strength |
MPa |
2650 |
| Elastic Modulus |
GPa |
430 |
| Fracture Toughness |
MPa*m¹/² |
4 |
| Poisson's Ratio |
|
0.14 |
| Young's Modulus |
GPa |
430 |
| Silicon Carbide Raw Material Purity |
% |
99 |
Thermal Properties
| Property |
Unit |
Silicon Carbide |
| Thermal Conductivity at 25°C |
W/mK |
110 |
| Melting Point |
°C |
2800 |
| Specific Heat |
J/g*K |
0.8 |
| Linear Expansion Coefficient |
10⁻⁶/K |
4 |
Electrical Characteristics
| Property |
Unit |
Silicon Carbide |
| Dielectric Constant |
1MHz |
10 |
| Breakdown Voltage |
V/cm |
1×10⁶ |
| Dielectric Loss |
1MHz |
0.001 |
| Resistivity |
Ω*cm |
10²-10⁶ |
