Ceramic
Arm
Zirconia
Ceramics
1.
It
has
excellent
wear
resistance,
chemical
corrosion
resistance,
high-temperature
resistance,
and
magnetic
resistance,
making
it
usable
in
extremely
harsh
environments
without
contaminating
materials
or
the
environment.
2.
It
features
high
toughness,
high
bending
strength,
and
high
wear
resistance,
as
well
as
excellent
thermal
insulation
properties,
with
a
thermal
expansion
coefficient
close
to
that
of
steel.
Nano
Alumina
Due
to
its
fine
particle
size,
nano
alumina
can
be
used
to
make
synthetic
gemstones,
analytical
reagents,
as
well
as
nano
catalysts
and
carriers.
When
used
in
luminescent
materials,
it
can
greatly
enhance
their
luminescence
intensity.
For
ceramics
and
rubber
toughening,
it
is
several
times
more
effective
than
ordinary
alumina,
particularly
in
improving
the
density,
surface
smoothness,
and
thermal
fatigue
resistance
of
ceramics.
Nano
alumina
is
mainly
used
in
key
components
of
YGA
laser
crystals
and
integrated
circuit
substrates,
and
is
also
added
to
coatings
to
improve
wear
resistance.
High-performance
ceramic
arm
designed
for
semiconductor
manufacturing
applications
requiring
exceptional
precision
and
durability.
Product
Features
-
Material
Characteristics:
High
hardness,
high
temperature
resistance,
chemical
corrosion
resistance
-
High-Precision
Machining:
Flatness
of
the
nozzle
position
can
be
controlled
within
0.02mm
-
Customized
Design:
Customizable
sizes
(up
to
around
400mm)
and
hole
positions,
compatible
with
mainstream
semiconductor
equipment
Mechanical
Properties
|
Property
|
Unit
|
Silicon
Carbide
|
|
Density
|
g/cm³
|
3.15
|
|
Vickers
Hardness
|
Hv0.5
|
2650
|
|
Flexural
Strength
|
MPa
|
450
|
|
Compressive
Strength
|
MPa
|
2650
|
|
Elastic
Modulus
|
GPa
|
430
|
|
Fracture
Toughness
|
MPa*m¹/²
|
4
|
|
Poisson's
Ratio
|
|
0.14
|
|
Young's
Modulus
|
GPa
|
430
|
|
Silicon
Carbide
Raw
Material
Purity
|
%
|
99
|
Thermal
Properties
|
Property
|
Unit
|
Silicon
Carbide
|
|
Thermal
Conductivity
at
25°C
|
W/mK
|
110
|
|
Melting
Point
|
°C
|
2800
|
|
Specific
Heat
|
J/g*K
|
0.8
|
|
Linear
Expansion
Coefficient
|
10⁻⁶/K
|
4
|
Electrical
Characteristics
|
Property
|
Unit
|
Silicon
Carbide
|
|
Dielectric
Constant
|
1MHz
|
10
|
|
Breakdown
Voltage
|
V/cm
|
1×10⁶
|
|
Dielectric
Loss
|
1MHz
|
0.001
|
|
Resistivity
|
Ω*cm
|
10²-10⁶
|